PART |
Description |
Maker |
A43L1632V-6 A43L1632V-7 A43L1632 |
512K X 32 Bit X 4 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
M32L32321SA M32L32321SA-5.5F M32L32321SA-5.5Q M32L |
512K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
ETC
|
M52D64322A-10BG |
512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
M52S64322A-10BG M52S64322A M52S64322A-7.5BG |
512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
IC42S16101-6T IC42S16101-6TI IC42S16101-7TG IC42S1 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆)内存
|
Rohm Co., Ltd. Electronic Theatre Controls, Inc. Atmel, Corp.
|
HY57V161610ETP-I HY57V161610ETP-5I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 200MHz
|
HYNIX[Hynix Semiconductor]
|
HY57V161610D-I HY57V161610DTC-10I HY57V161610DTC-7 |
SDRAM - 16Mb 2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc.
|
A43E06321G-95UF A43E06321 A43E06321G-75F A43E06321 |
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
|
AMICC[AMIC Technology]
|
K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NB |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
Samsung Electronic SAMSUNG [Samsung semiconductor] SAMSUNG[Samsung semiconductor]
|
MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR 4M (512K X 8) BIT
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
W9864G2IB |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|